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SiSF06DN - Dual N-Channel MOSFET

Features

  • TrenchFET® Gen IV power MOSFET.
  • Very low source-to-source on resistance.
  • Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package.
  • 100 % Rg and UIS tested.
  • Optimizes circuit layout for bi-directional current flow.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiSF06DN
Manufacturer Vishay
File Size 180.88 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SiSF06DN Datasheet
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Full PDF Text Transcription

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www.vishay.com SiSF06DN Vishay Siliconix Common Drain Dual N-Channel 30 V (S1-S2) MOSFET PowerPAK® 1212-8SCD S1 S1 8 S2 S2 6 7 5 S2 S1 3.3 mm 1 3.3 mm Top View PRODUCT SUMMARY VS1S2 (V) RS1S2(on) max. (Ω) at VGS = 10 V RS1S2(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) g IS1S2 (A) a Configuration 1 4 G2 3 D2 2 D1 G1 Bottom View 30 0.00450 0.00695 14 101 Common drain FEATURES • TrenchFET® Gen IV power MOSFET • Very low source-to-source on resistance • Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package • 100 % Rg and UIS tested • Optimizes circuit layout for bi-directional current flow • Material categorization: for definitions of compliance please see www.vishay.
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