SiSF04DN
FEATURES
- Trench FET® Gen IV power MOSFET
- Very low source-to-source on resistance
- Integrated mon-drain n-channel MOSFETs in a pact and thermally enhanced package
- 100 % Rg and UIS tested
- Optimizes circuit layout for bi-directional current flow
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
S1
- Battery protection switch
- Bi-directional switch
- Load switch
G1 N-Channel 1 MOSFET
N-Channel 2 MOSFET G2
S2
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
Power PAK 1212-8SCD Si SF04DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C
Maximum power dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering remendations (peak temperature) c
VS1S2 VGS IS1S2...
