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TSHA6501 - Infrared Emitting Diode

General Description

The TSHA650.

series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package.

Key Features

  • Package type: leaded.
  • Package form: T-1¾.
  • Dimensions (in mm): Ø 5.
  • Peak wavelength: λp = 875 nm.
  • High reliability.
  • Angle of half intensity: ϕ = ± 24°.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • Good spectral matching with Si photodetectors.
  • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with.

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Datasheet Details

Part number TSHA6501
Manufacturer Vishay
File Size 102.36 KB
Description Infrared Emitting Diode
Datasheet download datasheet TSHA6501 Datasheet

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TSHA6500, TSHA6501, TSHA6502, TSHA6503 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs 94 8389 DESCRIPTION The TSHA650. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package.