TSHA6501 Description
series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package.
TSHA6501 Key Features
- Package type: leaded
- Package form: T-1¾
- Dimensions (in mm): Ø 5
- Peak wavelength: λp = 875 nm
- High reliability
- Angle of half intensity: ϕ = ± 24°
- Low forward voltage
- Suitable for high pulse current operation
- Good spectral matching with Si photodetectors
- Lead (Pb)-free ponent in accordance
TSHA6501 Applications
- Infrared remote control and free air data transmission systems with fortable radiation angle
- This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in