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TSHA6503 - Infrared Emitting Diode

Download the TSHA6503 datasheet PDF. This datasheet also covers the TSHA6501 variant, as both devices belong to the same infrared emitting diode family and are provided as variant models within a single manufacturer datasheet.

General Description

The TSHA650.

series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package.

Key Features

  • Package type: leaded.
  • Package form: T-1¾.
  • Dimensions (in mm): Ø 5.
  • Peak wavelength: λp = 875 nm.
  • High reliability.
  • Angle of half intensity: ϕ = ± 24°.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • Good spectral matching with Si photodetectors.
  • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TSHA6501-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TSHA6503
Manufacturer Vishay
File Size 102.36 KB
Description Infrared Emitting Diode
Datasheet download datasheet TSHA6503 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TSHA6500, TSHA6501, TSHA6502, TSHA6503 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs 94 8389 DESCRIPTION The TSHA650. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package.