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TSHF4410 Datasheet High Speed Infrared Emitting Diode

Manufacturer: Vishay

Overview: TSHF4410 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS pliant, 890 nm, GaAlAs Double.

Datasheet Details

Part number TSHF4410
Manufacturer Vishay
File Size 117.39 KB
Description High Speed Infrared Emitting Diode
Datasheet TSHF4410_Vishay.pdf

General Description

TSHF4410 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

APPLICATIONS • Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements • Transmission systems according to IrDA requirements and for carrier frequency based systems (e.g.

ASK/FSK coded, 450 kHz or 1.3 MHz) • Smoke-automatic fire detectors PRODUCT SUMMARY PONENT TSHF4410 Ie (mW/sr) 40 ϕ (deg) ± 22 λP (nm) 890 tr (ns) 30 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSHF4410 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 5000 pcs, 5000 pcs/bulk PACKAGE FORM T-1 ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature tp/T = 0.5, tp = 100 µs tp = 100 µs TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj VALUE 5 100 200 1.5 180 100 UNIT V mA mA A mW °C Document Number: 81276 Rev.

Key Features

  • Package type: leaded.
  • Package form: T-1.
  • Dimensions (in mm): ∅ 3.
  • Peak wavelength: λp = 890 nm.
  • High reliability.
  • High radiant power.
  • High radiant intensity 94 8636.
  • Angle of half intensity: ϕ = ± 22°.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • High modulation bandwidth: fc = 12 MHz.
  • Good spectral matching with Si photodetectors.
  • Lead (Pb)-free component in.

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