Datasheet4U Logo Datasheet4U.com

TSHF4410 - High Speed Infrared Emitting Diode

Description

TSHF4410 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Infrared high speed remote control and free air data transmission systems with high modulation frequenci

Features

  • Package type: leaded.
  • Package form: T-1.
  • Dimensions (in mm): ∅ 3.
  • Peak wavelength: λp = 890 nm.
  • High reliability.
  • High radiant power.
  • High radiant intensity 94 8636.
  • Angle of half intensity: ϕ = ± 22°.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • High modulation bandwidth: fc = 12 MHz.
  • Good spectral matching with Si photodetectors.
  • Lead (Pb)-free component in.

📥 Download Datasheet

Datasheet Details

Part number TSHF4410
Manufacturer Vishay
File Size 117.39 KB
Description High Speed Infrared Emitting Diode
Datasheet download datasheet TSHF4410 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TSHF5200 High Speed IR Emitting Diode in 5 mm (T-13/4) Package Vishay Telefunken
TSHF5210 High Speed Infrared Emitting Diode Vishay Siliconix
TSHF5400 High Speed IR Emitting Diode in 5 mm (T-13/4) Package Vishay Telefunken
TSHF5410 High Speed Infrared Emitting Diode Vishay Siliconix
TSH10 140MHz BANDWIDTH LOW NOISE SINGLE OPERATIONAL AMPLIFIER STMicroelectronics

Other Datasheets by Vishay

Part Number Description
TSHF6210 High Speed Infrared Emitting Diode
TSHF6410 High Speed Infrared Emitting Diode
TSHA6203UL Infrared Emitting Diode
TSHA6500 Infrared Emitting Diode
TSHA6501 Infrared Emitting Diode

Full PDF Text Transcription

Click to expand full text
TSHF4410 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): ∅ 3 • Peak wavelength: λp = 890 nm • High reliability • High radiant power • High radiant intensity 94 8636 • Angle of half intensity: ϕ = ± 22° • Low forward voltage • Suitable for high pulse current operation • High modulation bandwidth: fc = 12 MHz • Good spectral matching with Si photodetectors • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with DESCRIPTION TSHF4410 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
Published: |