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TSHF6410 - High Speed Infrared Emitting Diode

Description

TSHF6410 is an infrared, 890 nm emitting diode based on surface emitter chip technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Features

  • Package type: leaded.
  • Package form: T-1¾.
  • Dimensions (in mm): ∅ 5.
  • Peak wavelength: λp = 890 nm.
  • High reliability.
  • High radiant power.
  • High radiant intensity.
  • Angle of half intensity: ϕ = ± 27°.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • Good spectral matching with Si photodetectors.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?.

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Datasheet Details

Part number TSHF6410
Manufacturer Vishay
File Size 120.67 KB
Description High Speed Infrared Emitting Diode
Datasheet download datasheet TSHF6410 Datasheet

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Full PDF Text Transcription

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Please Note PCN-OPT-1275-2023 Valid From 01-Dec-2023 (click here) www.vishay.com TSHF6410 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, Surface Emitter Technology 94 8389 DESCRIPTION TSHF6410 is an infrared, 890 nm emitting diode based on surface emitter chip technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): ∅ 5 • Peak wavelength: λp = 890 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 27° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Material categorization: for definitions of compliance please see www.vishay.
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