Full PDF Text Transcription for V10DM100C (Reference)
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V10DM100C. For precise diagrams, and layout, please refer to the original PDF.
www.vishay.com V10DM100C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.5 V at IF = 2.5 A eSMP® Series SMPD...
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hottky) Rectifier Ultra Low VF = 0.5 V at IF = 2.5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View Anode 1 Anode 2 K Cathode FEATURES • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.
V10DM100C Datasheet
