V10D100C Description
V10D100C Vishay General Semiconductor Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View V10D100C Anode 1.
V10D100C Key Features
- Trench MOS Schottky technology generation 2 Available
- Very low profile
- typical height of 1.7 mm
- Ideal for automated placement
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020
- AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
- Material categorization: for definitions of pliance