V10D100C - Dual High Voltage (Trench MOS Barrier Schottky Rectifier

Vishay

Key Features

Trench MOS Schottky technology generation 2 Available.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 A.

V10D100C dual high voltage (trench mos barrier schottky rectifier by Vishay - Datasheet Preview

Datasheet Details

Part number	V10D100C
Manufacturer	Vishay
File Size	121.02 KB
Description	Dual High Voltage (Trench MOS Barrier Schottky Rectifier
Datasheet	V10D100C Datasheet

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Full PDF Text Transcription (Reference)

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www.vishay.com V10D100C Vishay General Semiconductor Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View V10D100C Anode 1 K FEATURES • Trench MOS Schottky technology generation 2 Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.