Datasheet4U Logo Datasheet4U.com

V10D100C - Dual High Voltage (Trench MOS Barrier Schottky Rectifier

Datasheet Summary

Features

  • Trench MOS Schottky technology generation 2 Available.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 A.

📥 Download Datasheet

Datasheet preview – V10D100C

Datasheet Details

Part number V10D100C
Manufacturer Vishay
File Size 121.02 KB
Description Dual High Voltage (Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V10D100C Datasheet
Additional preview pages of the V10D100C datasheet.

📁 Similar Datasheet

  • V10-A500X - Surge Arrester 2-Electrode-Arrester (EPCOS)
  • V10-H08X - Surge Arrester 2-Electrode-Arrester (EPCOS)
  • V10-H14X - Surge Arrester 2-Electrode-Arrester (EPCOS)
  • V10-H22X - Surge Arrester 2-Electrode-Arrester (EPCOS)
  • V10-H30X - Surge Arrester 2-Electrode-Arrester (EPCOS)
  • V1000LA160B - UL Recognized Radial Lead Metal-Oxide Varistors (Harris)
  • V1000LA160B - Line Voltage Operation/ Radial Lead (Littelfuse)
  • V1000LA160BP - Metal-Oxide Varistors (Littelfuse)
  • V1000LA160CP - Radial Leaded Varistors (Littelfuse)
  • V1000LA80A - UL Recognized Radial Lead Metal-Oxide Varistors (Harris)
Other Datasheets by Vishay
  • V10D100C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • V10D100CHM3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • V10D120C - Trench MOS Barrier Schottky Rectifier
  • V10D120C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • V10D120CHM3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • V10D170C - Trench MOS Barrier Schottky Rectifier
  • V10D202C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • V10D45C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription

Click to expand full text
www.vishay.com V10D100C Vishay General Semiconductor Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View V10D100C Anode 1 K FEATURES • Trench MOS Schottky technology generation 2 Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.
Published: |