V10D100C-M3
V10D100C-M3 is Dual High-Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
.vishay.
V10D100C-M3, V10D100CHM3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.48 V at IF = 2.5 A
TMBS ® eSMP® Series
TO-263AC (SMPD)
2 Top View
Bottom View
V10D100C
PIN 1
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
100 V
IFSM VF at IF = 5.0 A (TA = 125 °C)
TJ max.
100 A 0.60 V 150 °C
Package
TO-263AC (SMPD)
Diode variations
Dual mon cathode
Features
- Trench MOS Schottky technology generation 2
- Very low profile
- typical height of 1.7 mm
- Ideal for automated...
