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V10D100C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Vishay

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V10D100C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – V10D100C-M3

Datasheet Details

Part number	V10D100C-M3
Manufacturer	Vishay
File Size	92.97 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V10D100C-M3 Datasheet
Additional preview pages of the V10D100C-M3 datasheet.

Product details

Features

Trench MOS Schottky technology generation 2.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Published: Apr 8, 2016 |