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V10D100C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Key Features

  • Trench MOS Schottky technology generation 2.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number V10D100C-M3
Manufacturer Vishay
File Size 92.97 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V10D100C-M3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com V10D100C-M3, V10D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V10D100C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 5.0 A VRRM 100 V IFSM VF at IF = 5.0 A (TA = 125 °C) TJ max. 100 A 0.60 V 150 °C Package TO-263AC (SMPD) Diode variations Dual common cathode FEATURES • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.