V10D120CHM3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
This page provides the datasheet information for the V10D120CHM3, a member of the V10D120C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier family.
Datasheet Summary
Features
Trench MOS Schottky technology.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C.
AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance
please see www. vishay. com/doc?99912.
V10D202C- Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D45C- Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Full PDF Text Transcription
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www.vishay.com
V10D120C-M3, V10D120CHM3
Vishay General Semiconductor
Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.53 V at IF = 2.5 A
eSMP® Series SMPD (TO-263AC)
K
1
2 Top View
Bottom View
V10D120C
Anode 1
K
Anode 2
Cathode
DESIGN SUPPORT TOOLS AVAILABLE
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5.0 A (TA = 125 °C) TJ max. Package
2 x 5.0 A 120 V 100 A 0.64 V 150 °C
SMPD (TO-263AC)
Circuit configuration
Common cathode
FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.
V10D120CHM3 Datasheet
