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V10D120CHM3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Download the V10D120CHM3 datasheet PDF. This datasheet also covers the V10D120C-M3 variant, as both devices belong to the same dual high-voltage trench mos barrier schottky rectifier family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Trench MOS Schottky technology.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (V10D120C-M3-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number V10D120CHM3
Manufacturer Vishay
File Size 116.23 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V10D120CHM3 Datasheet

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Other Datasheets by Vishay

Part Number Description
V10D120C Trench MOS Barrier Schottky Rectifier
V10D120C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D100C Dual High Voltage (Trench MOS Barrier Schottky Rectifier
V10D100C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D100CHM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com V10D120C-M3, V10D120CHM3 Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.53 V at IF = 2.5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View V10D120C Anode 1 K Anode 2 Cathode DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A (TA = 125 °C) TJ max. Package 2 x 5.0 A 120 V 100 A 0.64 V 150 °C SMPD (TO-263AC) Circuit configuration Common cathode FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.