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V10D120CHM3

Manufacturer: Vishay

V10D120CHM3 datasheet by Vishay.

This datasheet includes multiple variants, all published together in a single manufacturer document.

V10D120CHM3 datasheet preview

V10D120CHM3 Datasheet Details

Part number	V10D120CHM3
Datasheet	V10D120CHM3 V10D120C-M3 Datasheet (PDF)
File Size	116.23 KB
Manufacturer	Vishay
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V10D120CHM3 Overview

Package 2 x 5.0 A 120 V 100 A 0.64 V 150 °C SMPD (TO-263AC) Circuit configuration mon cathode.

V10D120CHM3 Key Features

Trench MOS Schottky technology
Very low profile
typical height of 1.7 mm
Ideal for automated placement
Low forward voltage drop, low power losses
High efficiency operation
Meets MSL level 1, per J-STD-020, LF maximum peak
AEC-Q101 qualified available:
Automotive ordering code: base P/NHM3
Material categorization: for definitions of pliance

More Datasheets from Vishay

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Part Number	Description
V10D120C	Trench MOS Barrier Schottky Rectifier
V10D120C-M3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D100C	Dual High Voltage (Trench MOS Barrier Schottky Rectifier
V10D100C-M3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D100CHM3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D170C	Trench MOS Barrier Schottky Rectifier
V10D202C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D45C	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
V10D60C	Dual Trench MOS Barrier Schottky Rectifier
V10DM100C	Trench MOS Barrier Schottky Rectifier

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