Datasheet4U Logo Datasheet4U.com

V10D100CHM3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Download the V10D100CHM3 datasheet PDF. This datasheet also covers the V10D100C-M3 variant, as both devices belong to the same dual high-voltage trench mos barrier schottky rectifier family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Trench MOS Schottky technology generation 2.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (V10D100C-M3-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number V10D100CHM3
Manufacturer Vishay
File Size 92.97 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V10D100CHM3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
V10-A500X Surge Arrester 2-Electrode-Arrester EPCOS
V10-H08X Surge Arrester 2-Electrode-Arrester EPCOS
V10-H14X Surge Arrester 2-Electrode-Arrester EPCOS
V10-H22X Surge Arrester 2-Electrode-Arrester EPCOS
V10-H30X Surge Arrester 2-Electrode-Arrester EPCOS

Other Datasheets by Vishay

Part Number Description
V10D100C Dual High Voltage (Trench MOS Barrier Schottky Rectifier
V10D100C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D120C Trench MOS Barrier Schottky Rectifier
V10D120C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D120CHM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com V10D100C-M3, V10D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V10D100C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 5.0 A VRRM 100 V IFSM VF at IF = 5.0 A (TA = 125 °C) TJ max. 100 A 0.60 V 150 °C Package TO-263AC (SMPD) Diode variations Dual common cathode FEATURES • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.