V10D100CHM3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
This page provides the datasheet information for the V10D100CHM3, a member of the V10D100C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier family.
Datasheet Summary
Features
Trench MOS Schottky technology generation 2.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C.
AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3.
Material categorization: For definitions of compliance
please see www. vishay. com/doc?99912.
V10D202C- Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D45C- Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Full PDF Text Transcription
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www.vishay.com
V10D100C-M3, V10D100CHM3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.48 V at IF = 2.5 A
TMBS ® eSMP® Series
TO-263AC (SMPD)
K
1
2 Top View
Bottom View
V10D100C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
100 V
IFSM VF at IF = 5.0 A (TA = 125 °C)
TJ max.
100 A 0.60 V 150 °C
Package
TO-263AC (SMPD)
Diode variations
Dual common cathode
FEATURES • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.
V10D100CHM3 Datasheet
