V10D120C-M3
V10D120C-M3 is Dual High-Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
.vishay.
V10D120C-M3, V10D120CHM3
Vishay General Semiconductor
Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.53 V at IF = 2.5 A eSMP® Series SMPD (TO-263AC)
2 Top View
Bottom View
V10D120C
Anode 1
Anode 2
Cathode
DESIGN SUPPORT TOOLS AVAILABLE
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5.0 A (TA = 125 °C) TJ max. Package
2 x 5.0 A 120 V 100 A 0.64 V 150 °C
SMPD (TO-263AC)
Circuit configuration mon cathode
Features
- Trench MOS Schottky technology
- Very low profile
- typical height of 1.7 mm
- Ideal for automated placement
- Low forward voltage drop, low power losses
- High efficiency operation
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