V10D120C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Key Features

Trench MOS Schottky technology.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

V10D120C-M3 dual high-voltage trench mos barrier schottky rectifier by Vishay - Datasheet Preview

Datasheet Details

Part number	V10D120C-M3
Manufacturer	Vishay
File Size	116.23 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V10D120C-M3 Datasheet

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Other Datasheets by Vishay

Part Number	Description
V10D120C	Trench MOS Barrier Schottky Rectifier
V10D120CHM3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D100C	Dual High Voltage (Trench MOS Barrier Schottky Rectifier
V10D100C-M3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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www.vishay.com V10D120C-M3, V10D120CHM3 Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.53 V at IF = 2.5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View V10D120C Anode 1 K Anode 2 Cathode DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A (TA = 125 °C) TJ max. Package 2 x 5.0 A 120 V 100 A 0.64 V 150 °C SMPD (TO-263AC) Circuit configuration Common cathode FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.