Datasheet4U Logo Datasheet4U.com

V10D120C-M3 Datasheet Dual High-voltage Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: .vishay. V10D120C-M3, V10D120CHM3 Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.53 V at IF = 2.5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View V10D120C Anode 1 K Anode 2 Cathode DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A (TA = 125 °C) TJ max. Package 2 x 5.0 A 120 V 100 A 0.

Datasheet Details

Part number V10D120C-M3
Manufacturer Vishay
File Size 116.23 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet V10D120C-M3-Vishay.pdf

Key Features

  • Trench MOS Schottky technology.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

More Datasheets from Vishay

Part Number Description
V10D120C Trench MOS Barrier Schottky Rectifier
V10D120CHM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D100C Dual High Voltage (Trench MOS Barrier Schottky Rectifier
V10D100C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D100CHM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D170C Trench MOS Barrier Schottky Rectifier
V10D202C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V10D45C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
V10D60C Dual Trench MOS Barrier Schottky Rectifier
V10DM100C Trench MOS Barrier Schottky Rectifier

V10D120C-M3 Distributor