V10D120C - Trench MOS Barrier Schottky Rectifier

Vishay

Key Features

Trench MOS Schottky technology Available.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYPIC.

V10D120C trench mos barrier schottky rectifier by Vishay - Datasheet Preview

Datasheet Details

Part number	V10D120C
Manufacturer	Vishay
File Size	121.60 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V10D120C Datasheet

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www.vishay.com V10D120C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.53 V at IF = 2.5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View V10D120C Anode 1 K Anode 2 Cathode LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A (TA = 125 °C) TJ max. Package 2 x 5.0 A 120 V 100 A 0.64 V 150 °C SMPD (TO-263AC) Circuit configuration Common cathode FEATURES • Trench MOS Schottky technology Available • Very low profile - typical height of 1.