Datasheet4U Logo Datasheet4U.com

V20150C Datasheet Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

📥 Download Datasheet

Datasheet Details

Part number V20150C
Manufacturer Vishay
File Size 139.27 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Download V20150C Download (PDF)

Overview

www.vishay.com V20150C, VF20150C, VB20150C, VI20150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

More Datasheets from Vishay

Part Number Description
V20150C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
V20150S High-Voltage Trench MOS Barrier Schottky Rectifier
V20150S-E3 High Voltage Trench MOS Barrier Schottky Rectifier
V20150SG High-Voltage Trench MOS Barrier Schottky Rectifier
V20150SG-E3 High Voltage Trench MOS Barrier Schottky Rectifier
V20100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
V20100S High-Voltage Trench MOS Barrier Schottky Rectifier
V20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier
V20100SG High-Voltage Trench MOS Barrier Schottky Rectifier