V20150S - High-Voltage Trench MOS Barrier Schottky Rectifier

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder bath temperature 275 °C max. 10 s, per JESD 22-B106.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	V20150S
Manufacturer	Vishay
File Size	136.13 KB
Description	High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V20150S Datasheet
Additional preview pages of the V20150S datasheet.

📁 Similar Datasheet

V201B1-L01 - TFt LCD (CHI MEI)
V201B1-L02 - TFT LCD Module (Chi Mei)
V201B1-L03 - LCD Module (CHI MEI)
V201HA32 - Varistor (Littelfuse)
V201HA40 - Varistor (Littelfuse)
V201V1-P01 - TFT LCD Module (CHI MEI)
V201V1-T01 - LCD_Module (CHIMEI)
V201V1-T02 - TFT LCD (CHI MEI)
V201V1-T03 - LCD Module (CHI MEI)
V201V2-T01 - LCD_Module (CHIMEI)

Other Datasheets by Vishay

V20150S-E3 - High Voltage Trench MOS Barrier Schottky Rectifier
V20150SG - High-Voltage Trench MOS Barrier Schottky Rectifier
V20150SG-E3 - High Voltage Trench MOS Barrier Schottky Rectifier
V20150C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20150C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
V20100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20100C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
V20100S - High-Voltage Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription

Click to expand full text

www.vishay.com V20150S, VI20150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A TO-220AB TMBS ® TO-262AA K 3 2 1 V20150S PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI20150S PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reserve battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 20 A 150 V 160 A VF at IF = 20 A 0.75 V TJ max.

Published: Feb 2, 2012 |