V20150SG - High-Voltage Trench MOS Barrier Schottky Rectifier

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder bath temperature 275 °C max. 10 s, per JESD 22-B106.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	V20150SG
Manufacturer	Vishay
File Size	136.34 KB
Description	High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V20150SG Datasheet
Additional preview pages of the V20150SG datasheet.

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Full PDF Text Transcription

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www.vishay.com V20150SG, VI20150SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A TO-220AB TMBS ® TO-262AA K 3 2 1 V20150SG PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI20150SG PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 150 V IFSM 140 A VF at IF = 20 A TJ max. 0.

Published: Feb 2, 2012 |