V2PM10 Datasheet Surface Mount Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

V2PM10 surface mount trench mos barrier schottky rectifier by Vishay - Datasheet Preview

Datasheet Details

Part number	V2PM10
Manufacturer	Vishay
File Size	98.71 KB
Description	Surface Mount Trench MOS Barrier Schottky Rectifier
Download	V2PM10 Download (PDF)

Overview

www.vishay.com V2PM10 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® eSMP® Series Top View Bottom View MicroSMP (DO-219AD) Anode Cathode DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2A 100 V 30 A VF at IF = 2 A (125 °C) 0.62 V TJ max.

Key Features

Very low profile - typical height of 0.65 mm Available.
Ideal for automated placement.
Trench MOS Schottky technology.
Low forward voltage drop.
Low power loss, high efficiency.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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