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V2PM10 - Surface Mount Trench MOS Barrier Schottky Rectifier

Features

  • Very low profile - typical height of 0.65 mm Available.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low forward voltage drop.
  • Low power loss, high efficiency.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet preview – V2PM10

Datasheet Details

Part number V2PM10
Manufacturer Vishay
File Size 98.71 KB
Description Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V2PM10 Datasheet
Additional preview pages of the V2PM10 datasheet.

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Full PDF Text Transcription

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www.vishay.com V2PM10 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® eSMP® Series Top View Bottom View MicroSMP (DO-219AD) Anode Cathode DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2A 100 V 30 A VF at IF = 2 A (125 °C) 0.62 V TJ max. Package 175 °C MicroSMP (DO-219AD) Circuit configuration Single FEATURES • Very low profile - typical height of 0.
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