• Part: V2PM12
  • Description: Surface Mount Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 101.93 KB
Download V2PM12 Datasheet PDF
Vishay
V2PM12
V2PM12 is Surface Mount Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
.vishay. Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® eSMP® Series Top View Bottom View MicroSMP (DO-219AD) Anode Cathode DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2A 120 V 30 A VF at IF = 2 A (125 °C) 0.65 V TJ max. Package 175 °C MicroSMP (DO-219AD) Circuit configuration Single Features - Very low profile - typical height of 0.65 mm Available - Ideal for automated placement - Trench MOS Schottky technology - Low forward voltage drop - Low power loss, high efficiency - Meets MSL level 1, per J-STD-020, LF maximum peak of 260...