V30202C Datasheet PDF - Vishay Dual High Voltage Trench MOS Barrier Schottky Rectifier Specs

V30202C - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Datasheet Summary

Features

Trench MOS Schottky technology Gen 2.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Datasheet Details

Part number	V30202C
Manufacturer	Vishay
File Size	201.35 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V30202C Datasheet
Additional preview pages of the V30202C datasheet.

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Full PDF Text Transcription

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www.vishay.com V30202C, VF30202C, VB30202C, VI30202C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V30202C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VF30202C 123 PIN 1 PIN 2 PIN 3 TO-263AB K TO-262AA K FEATURES • Trench MOS Schottky technology Gen 2 • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Material categorization: for definitions of compliance please see www.vishay.

Published: May 4, 2020 |