V40D120C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Key Features

Trench MOS Schottky technology.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

V40D120C-M3 dual high-voltage trench mos barrier schottky rectifier by Vishay - Datasheet Preview

Datasheet Details

Part number	V40D120C-M3
Manufacturer	Vishay
File Size	104.88 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V40D120C-M3 Datasheet

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www.vishay.com V40D120C-M3, V40D120CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.45 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V40D120C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 20 A VRRM 120 V IFSM VF at IF = 20 A (TA = 125 °C) TJ max. 250 A 0.64 V 150 °C Package TO-263AC (SMPD) Diode variations Dual common cathode FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.