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V40D120CHM3 Datasheet

Manufacturer: Vishay

This datasheet includes multiple variants, all published together in a single manufacturer document.

V40D120CHM3 datasheet preview

Datasheet Details

Part number	V40D120CHM3
Datasheet	V40D120CHM3 V40D120C-M3 Datasheet (PDF)
File Size	104.88 KB
Manufacturer	Vishay
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V40D120CHM3 Overview

250 A 0.64 V 150 °C Package TO-263AC (SMPD) Diode variations Dual mon cathode.

V40D120CHM3 Key Features

Trench MOS Schottky technology
Very low profile
typical height of 1.7 mm
Ideal for automated placement
Low forward voltage drop, low power losses
High efficiency operation
Meets MSL level 1, per J-STD-020, LF maximum peak
AEC-Q101 qualified available:
Automotive ordering code: base P/NHM3
Material categorization: for definitions of pliance

More Datasheets from Vishay

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Part Number	Description
V40D120C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40D120C-M3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40D100C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40D100C-M3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40D100CHM3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40D45C	Trench MOS Barrier Schottky Rectifier
V40D60C	Trench MOS Barrier Schottky Rectifier
V40DL45	Trench MOS Barrier Schottky Rectifier
V40DL45BP	Trench MOS Barrier Schottky Rectifier
V40DM100C	Trench MOS Barrier Schottky Rectifier

V40D120CHM3 Distributor