Vishay V40D120C
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
| Part No. | V40D120C |
|---|---|
| Datasheet | V40D120C Download |
| Manufacturer |  Vishay |
| Description | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| Buy | Stock & Price |
FEATURES
● Trench MOS Schottky technology Available● Very low profile - typical height of 1.7 mm
● Ideal for automated placement
● Low forward voltage drop, low power losses
● High efficiency operation
● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
● AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3
● Material categorization: for definitions of compliance please see
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and automotive application. PRIMARY CHARACTERISTICS IF(AV) 2 x 20 A VRRM 120 V IFSM 250 A VF at IF = 20 A (TA = 125 °C) TJ max. 0.64 V 150 °C Package SMPD (TO-263AC) Circuit configuration Common cathodeMECHANICAL DATA
Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Termina...
