Vishay V60100C
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
| Part No. | V60100C |
|---|---|
| Datasheet | V60100C Download |
| Manufacturer |  Vishay |
| Description | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| Buy | Stock & Price |
FEATURES
● Trench MOS Schottky technology● Low forward voltage drop, low power losses
● High efficiency operation
● Solder dip 275 °C max. 10 s, per JESD 22-B106
● Material categorization: for definitions of compliance please see
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 100 V IFSM 320 A VF at IF = 30 A TJ max. 0.66 V 150 °C Package TO-220AB Diode variation Common cathodeMECHANICAL DATA
Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs max.MAXIMUM RATINGS
(TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Max. repetitive peak reverse voltage Max. average forward rectified current (fig.
