V8PM10 Datasheet Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: www.vishay.com V8PM10 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.50 V at IF = 4 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 8A VRRM 100 V IFSM 140 A VF at IF = 8 A (125 °C) TJ max. 0.

Datasheet Details

Part number	V8PM10
Manufacturer	Vishay
File Size	105.95 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V8PM10-Vishay.pdf

Key Features

Very low profile - typical height of 1.1 mm Available.
Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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