• Part: V8PM12
  • Description: Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 107.72 KB
Download V8PM12 Datasheet PDF
Vishay
V8PM12
V8PM12 is Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
.vishay. Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.53 V at IF = 4 A eSMP® Series 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 DESIGN SUPPORT TOOLS click logo to get started Features - Very low profile - typical height of 1.1 mm Available - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C - AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 - Material categorization: for definitions of pliance please see .vishay./doc?99912 TYPICAL...