V8PM10S Datasheet Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: www.vishay.com V8PM10S Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.50 V at IF = 4 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 8A 100 V 120 A VF at IF = 8 A (125 °C) 0.62 V TJ max.

Datasheet Details

Part number	V8PM10S
Manufacturer	Vishay
File Size	101.29 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V8PM10S-Vishay.pdf

Key Features

Very low profile - typical height of 1.1 mm Available.
Ideal for automated placement.
Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYPIC.

V8PM10S Distributor & Price

Compare V8PM10S distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from Vishay

Part Number	Description
V8PM10	Trench MOS Barrier Schottky Rectifier
V8PM12	Trench MOS Barrier Schottky Rectifier
V8PM15	Trench MOS Barrier Schottky Rectifier
V8PM45	Trench MOS Barrier Schottky Rectifier
V8PM6	Trench MOS Barrier Schottky Rectifier
V8P10	Trench MOS Barrier Schottky Rectifier
V8P12	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V8P15	Trench MOS Barrier Schottky Rectifier
V8P20	Trench MOS Barrier Schottky Rectifier
V8P45	Trench MOS Barrier Schottky Rectifier