V8PM10S - Trench MOS Barrier Schottky Rectifier

Datasheet Summary

Features

Very low profile - typical height of 1.1 mm Available.
Ideal for automated placement.
Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYPIC.

Vishay

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Datasheet Details

Part number	V8PM10S
Manufacturer	Vishay
File Size	101.29 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V8PM10S Datasheet
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www.vishay.com V8PM10S Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.50 V at IF = 4 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 8A 100 V 120 A VF at IF = 8 A (125 °C) 0.62 V TJ max. Package 175 °C SMPC (TO-277A) Circuit configuration Single FEATURES • Very low profile - typical height of 1.

Published: Jun 8, 2020 |