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VB40170C
www.vishay.com
Vishay General Semiconductor
Ultra Low VF = 0.52 V at IF = 5 A
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS ®
TO-263AB
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
2
K
1 VB40170C
PIN 1 PIN 2 K HEATSINK
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
MECHANICAL DATA PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 170 V 200 A 0.
VB40170C Datasheet
