VB40170C Description
Vishay General Semiconductor Ultra Low VF = 0.52 V at IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-263AB.
VB40170C Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
- Material categorization: For definitions of pliance please see .vishay./doc?99912
VB40170C Applications
- RoHS-pliant, mercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As