VBT1545CBP-E3 Datasheet | Vishay

.vishay. Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.41 V at IF = 5 A TMBS ® D2PAK (TO-263AB) 1 VBT1545CBP PIN 1 PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 7.5 A TOP max. (AC mode) TJ max. (DC forward current) Package 2 x 7.5 A 45 V 100 A 0.49 V 150 °C 200 °C D2PAK (TO-263AB) Circuit configurations mon cathode Features - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C -...