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www.vishay.com
VBT1545CBP-E3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.41 V at IF = 5 A
TMBS ®
D2PAK (TO-263AB)
K
2
1 VBT1545CBP
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 7.5 A TOP max. (AC mode) TJ max. (DC forward current) Package
2 x 7.5 A 45 V 100 A 0.49 V
150 °C 200 °C D2PAK (TO-263AB)
Circuit configurations
Common cathode
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C • TJ 200 °C max.
VBT1545CBP-E3 Datasheet
