• Part: VBT3080C-E3
  • Description: Dual Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 160.31 KB
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Vishay
VBT3080C-E3
VBT3080C-E3 is Dual Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
VT3080C-E3, VFT3080C-E3, VBT3080C-E3, VIT3080C-E3 .vishay. Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT3080C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB VFT3080C PIN 1 PIN 2 PIN 3 TO-262AA K Features - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) - Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) - Material categorization: for definitions of pliance please see...