VFT3060C - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

Part number	VFT3060C
Manufacturer	Vishay
File Size	125.66 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VFT3060C Datasheet
Additional preview pages of the VFT3060C datasheet.

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

📁 Similar Datasheet

VFT30-28 - VHF POWER MOSFET (Advanced Semiconductor)
VFT30-50 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
VFT300-28 - VHF POWER MOSFET Silicon N-Channel Enhancement Mode (Advanced Semiconductor)
VFT300-50 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
VFT3045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VFT1045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VFT15-12 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
VFT15-28 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)

Other Datasheets by Vishay

Published: Feb 5, 2016 |