VFT3060G-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

Part number	VFT3060G-E3
Manufacturer	Vishay
File Size	143.16 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VFT3060G-E3 Datasheet
Additional preview pages of the VFT3060G-E3 datasheet.

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Not recommended for PCB bottom side wave mounting.
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
Material categorization: for.

📁 Similar Datasheet

VFT30-28 - VHF POWER MOSFET (Advanced Semiconductor)
VFT30-50 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
VFT300-28 - VHF POWER MOSFET Silicon N-Channel Enhancement Mode (Advanced Semiconductor)
VFT300-50 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
VFT3045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VFT1045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VFT15-12 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
VFT15-28 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)

Other Datasheets by Vishay

Published: Aug 30, 2017 |