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VFT3060G-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Not recommended for PCB bottom side wave mounting.
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
  • Material categorization: for.

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Datasheet preview – VFT3060G-E3

Datasheet Details

Part number VFT3060G-E3
Manufacturer Vishay
File Size 143.16 KB
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VFT3060G-E3 Datasheet
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Full PDF Text Transcription

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VT3060G-E3, VFT3060G-E3, VBT3060G-E3, VIT3060G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT3060G 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VFT3060G 123 PIN 1 PIN 2 PIN 3 TO-262AA K 2 1 VBT3060G PIN 1 K PIN 2 HEATSINK VIT3060G 3 2 1 PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package 2 x 15 A 60 V 150 A 0.
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