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VFT3060G Datasheet Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

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Datasheet Details

Part number VFT3060G
Manufacturer Vishay
File Size 151.76 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Download Download datasheet VFT3060G Download (PDF)

Overview

www.vishay.com VT3060G, VFT3060G, VBT3060G, VIT3060G Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT3060G 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VFT3060G 123 PIN 1 PIN 2 PIN 3 TO-262AA K 2 1 VBT3060G PIN 1 K PIN 2 HEATSINK VIT3060G 3 2 1 PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max.

Package 2 x 15 A 60 V 150 A 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Not recommended for PCB bottom side wave mounting.
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99.

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