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VI30100C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

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Datasheet Details

Part number VI30100C-E3
Manufacturer Vishay
File Size 208.57 KB
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VI30100C-E3 Datasheet

Overview

V30100C-E3, VF30100C-E3, VB30100C-E3, VI30100C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Low thermal resistance.
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 2 1 VB30100C PIN 1.

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