Datasheet4U.com

VI30100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

📥 Download Datasheet

VI30100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – VI30100C

Datasheet Details

Part number	VI30100C
Manufacturer	Vishay
File Size	133.72 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VI30100C Datasheet
Additional preview pages of the VI30100C datasheet.

Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📁 Similar Datasheet

VI30120S - High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VI315-2 - LCD (varitronix)
VI315-DP - LCD (varitronix)
VI315-DPRC - LCD (ETC)

Other Datasheets by Vishay

VI30100C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
VI30100S - High-Voltage Trench MOS Barrier Schottky Rectifier
VI30100S-E3 - High Voltage Trench MOS Barrier Schottky Rectifier
VI30100SG - High-Voltage Trench MOS Barrier Schottky Rectifier
VI30120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VI30120C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Published: Feb 2, 2012 |