Datasheet4U Logo Datasheet4U.com

VI30100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

📥 Download Datasheet

Datasheet Details

Part number VI30100C
Manufacturer Vishay
File Size 133.72 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VI30100C Datasheet

Overview

www.vishay.com V30100C, VI30100C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Low thermal resistance.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

More Datasheets from Vishay

Part Number Description
VI30100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
VI30100S High-Voltage Trench MOS Barrier Schottky Rectifier
VI30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier
VI30100SG High-Voltage Trench MOS Barrier Schottky Rectifier
VI30120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VI30120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
VI30120S High-Voltage Trench MOS Barrier Schottky Rectifier
VI30120SG High-Voltage Trench MOS Barrier Schottky Rectifier
VI30150C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VI30202C Dual High Voltage Trench MOS Barrier Schottky Rectifier