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VI30100S - High-Voltage Trench MOS Barrier Schottky Rectifier

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Datasheet Details

Part number VI30100S
Manufacturer Vishay
File Size 139.30 KB
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VI30100S Datasheet

Overview

www.vishay.com V30100S, VI30100S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V30100S 3 2 1 PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI30100S PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max.

Package 30 A 100 V 250 A 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • AEC-Q101 qualified.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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