VS-GT300YH120N
VS-GT300YH120N is DIAP Trench IGBT manufactured by Vishay.
.vishay.
Vishay Semiconductors
DIAP Trench IGBT Power Module
- 1200 V, 300 A Current Fed Inverter Topology
PRIMARY CHARACTERISTICS
IGBT
VCES
1200 V
VCE(on) (typical) at 300 A, 25 °C
1.93 V
ID(DC) at TC = 80 °C
300 A
HEXFRED® SERIES DIODE
VR 1200 V
VF (typical) at 300 A, 25 °C
1.99 V
IF(DC) at 80 °C
300 A
IGBT AND HEXFRED® SERIES DIODE
VCE(on) + VF typical at 300 A
3.92 V
HEXFRED® ANTIPARALLEL DIODE
VF (typical) at 10 A, 25 °C IF(DC) at 88 °C Package
1.6 V 40 A Dual INT-A-PAK
Features
- 1200 V IGBT trench and field stop technology with positive temperature coefficient
- Low switching losses
- Maximum junction temperature 175 °C
- 10 μs short circuit capability
- Low inductance...
