Datasheet Details
| Part number | VS-GT300YH120N |
|---|---|
| Manufacturer | Vishay |
| File Size | 190.58 KB |
| Description | DIAP Trench IGBT |
| Download | VS-GT300YH120N Download (PDF) |
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Overview: www.vishay.com VS-GT300YH120N Vishay Semiconductors DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology PRIMARY CHARACTERISTICS IGBT VCES 1200 V VCE(on) (typical) at 300 A, 25 °C 1.93 V ID(DC) at TC = 80 °C 300 A HEXFRED® SERIES DIODE VR 1200 V VF (typical) at 300 A, 25 °C 1.99 V IF(DC) at 80 °C 300 A IGBT AND HEXFRED® SERIES DIODE VCE(on) + VF typical at 300 A 3.92 V HEXFRED® ANTIPARALLEL DIODE VF (typical) at 10 A, 25 °C IF(DC) at 88 °C Package 1.
| Part number | VS-GT300YH120N |
|---|---|
| Manufacturer | Vishay |
| File Size | 190.58 KB |
| Description | DIAP Trench IGBT |
| Download | VS-GT300YH120N Download (PDF) |
|
|
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| Part Number | Description |
|---|---|
| VS-GT300FD060N | DIAP Low Profile 3-Levels Half-Bridge Inverter Stage |
| VS-GT100LA120UX | IGBT |
| VS-GT100NA120UX | IGBT |
| VS-GT100TP120N | Half Bridge IGBT |
| VS-GT100TP60N | Half Bridge IGBT |
| VS-GT120DA65U | IGBT |
| VS-GT140DA60U | IGBT |
| VS-GT175DA120U | IGBT |
| VS-GT180DA120U | IGBT |
| VS-GT200TP065N | Half Bridge - Trench IGBT |