VS-GT300YH120N Description
.vishay. VS-GT300YH120N Vishay Semiconductors DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology PRIMARY CHARACTERISTICS IGBT VCES 1200 V VCE(on) (typical) at 300 A, 25 °C 1.93 V ID(DC) at TC = 80 °C 300 A HEXFRED® SERIES DIODE VR.
VS-GT300YH120N Key Features
- 1200 V IGBT trench and field stop technology with positive temperature coefficient
- Low switching losses
- Maximum junction temperature 175 °C
- 10 μs short circuit capability
- Low inductance case
- HEXFRED® antiparallel and series diodes with soft reverse
- Isolated copper baseplate using DCB (Direct Copper
- Speed 4 kHz to 30 kHz
- Direct mounting to heatsink
- Material categorization: for definitions of pliance