TCED4100 Description
The TCED4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 8-pin (dual) or 16-pin (quad) plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements. C E 1 A C 8 pin 16 pin LINKS TO ADDITIONAL RESOURCES Product Page Design Tools Models Footprints Schematics VDE STANDARDS...
TCED4100 Key Features
- Isolation materials according to UL 94 V-0
- Pollution degree 2 (DIN/VDE 0110/resp
- Climatic classification 55/100/21 (IEC 60068
- Special construction: therefore, extra low
- Low temperature coefficient of CTR
- Creepage current resistance according to VDE 0303 / IEC 60112 parative tracking index: CTI ≥ 175
- Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak
- Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV peak
- Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS
- Rated recurring peak voltage (repetitive) VIORM = 848 V peak