WMJ028N10HGS Description
WMJ028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.
WMJ028N10HGS Key Features
- VDS= 100V, ID = 228A RDS(on) < 3mΩ @ VGS = 10V
- High Speed Power Switching
- Low Gate Charge
- Low RDS(ON)
- 100% EAS Guaranteed