WMJ028N10HGS - 100V N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

WMJ028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

This device is well suited for high efficiency fast switching applications.

Features

VDS= 100V, ID = 228A RDS(on) < 3mΩ @ VGS = 10V.
High Speed Power Switching.
Low Gate Charge.
Low RDS(ON).
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Datasheet Details

Part number	WMJ028N10HGS
Manufacturer	WAYON
File Size	593.96 KB
Description	100V N-Channel Enhancement Mode Power MOSFET
Datasheet	WMJ028N10HGS Datasheet
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WMJ028N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMJ028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.

Published: Sep 12, 2024 |