WMJ028N10HGS
WMJ028N10HGS is 100V N-Channel Enhancement Mode Power MOSFET manufactured by WAYON.
Description
WMJ028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.
Features
- VDS= 100V, ID = 228A RDS(on) < 3mΩ @ VGS = 10V
- High Speed Power Switching
- Low Gate Charge
- Low RDS(ON)
- 100% EAS Guaranteed
Applications
Ro HS pliant
- DC/DC Converter
- Power Management Switching
- Motor Driver
Absolute Maximum Ratings (TA = 25°C, unless otherwise noted)
Parameter
Symbol
Value
Drain-Source Voltage
Gate-Source Voltage
±20
Continuous Drain Current
TC=25°C
TC=100°C
Pulsed Drain Current1
Single Pulse Avalanche Energy2
Total Power Dissipation
TC=25°C
Operating Junction and Storage Temperature Range
, TJ TSTG
320.5 -55 to 150
Thermal Characteristics
Parameter Thermal Resistance from Junction-to-Ambient3 Thermal Resistance from Junction-to-Case...
