WMJ80N60C4 Datasheet | WAYON

Description WMOSTM C4 is Wayon’s 4th generation super junction MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. WMOSTM C4 is suitable for applications which require superior power density and outstanding efficiency. Features - VDS =650V @ Tj,max - Typ. RDS(on) =0.033Ω - 100% UIS tested - Pb-free plating, Halogen free Applications LED Lighting, Charger, Adapter, PC, LCD TV, Server G DS TO-247 Ro HS pliant Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current1) Pulsed drain current2) ( TC = 25°C ) ( TC = 100°C ) Gate-source voltage Avalanche energy, single pulse3) Avalanche energy, repetitive2) Avalanche current, repetitive2) Power dissipation ( TC = 25°C ) - Derate above 25°C Operating and storage temperature range Continuous diode forward current Diode pulse current Symbol VDSS ID IDM VGS EAS EAR IAR PD Tj, Tstg IS IS,pulse WMJ80N60C4 600 80 45 245 ±30 850 1.2 6 410 3.28 -55 to +150 80 245 Thermal Characteristics Parameter Thermal resistance, junction-to-case Thermal resistance, junction-to-ambient Rev.2.0, 2019 Symbol RθJC RθJA WMJ80N60C4 0.35 62 Doc.W0860042 Unit V A A A V m J m J A W W/°C °C A A Unit °C/W °C/W 1/7 Electrical Characteristics Tc = 25°C, unless otherwise...