WMJ36N60C4 Datasheet | WAYON

Description WMOSTM C4 is Wayon’s 4th generation super junction MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. WMOSTM C4 is suitable for applications which require superior power density and outstanding efficiency. Features - VDS =650V @ Tj,max - Typ. RDS(on) =0.08Ω - 100% UIS tested - Pb-free plating, Halogen free Applications LED Lighting, Charger, Adapter, PC, LCD TV, Server GD S TO-220F TO-262 G DS TO-220 TO-263 G DS TO-247 Ro HS pliant Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current1) Pulsed drain current2) ( TC = 25°C ) ( TC = 100°C ) Gate-source voltage Avalanche energy, single pulse3) Avalanche energy, repetitive2) Avalanche current, repetitive2) Power dissipation ( TC = 25°C ) - Derate above 25°C Operating and storage temperature range Continuous diode forward current Diode pulse current Symbol VDSS ID IDM VGS EAS EAR IAR PD Tj, Tstg IS IS,pulse WMK/WMM/WMN/WMJ 600 36 20 100 ±30 550 0.8 4 277 2.22 -55 to +150 36 100 Thermal Characteristics...