WEITRON MMBT2907
PNP Transistor
| Part No. | MMBT2907 |
|---|---|
| Datasheet | MMBT2907 Download |
| Manufacturer |  WEITRON |
| Description | PNP Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC MMBT2907 MMBT2907A COLLECTOR 3 3 1 BASE 2 EMITTER 1 2 SOT-23 2907 -40 2907A -60 -60 -5.0 -600 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature DEVICE MARKING MMBT2907=M2B; MMBT2907A=2FELECTRICAL CHARACTERISTICS
Characteristics Symbol PD R qJA PD R qJA TJ,Tstg Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/ C C/W mW mW/ C C/W C Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0) MMBT2907 MMBT2907A V(BR)CEO -40 -60 - Vdc Collector-Base Breakdown Voltage (IC= -10 µAdc, IE=0) V(BR)CBO -60 - Vdc Emitter-Base Breakdown Voltage (IE= -10...
