MMBT3904T Datasheet | WEITRON

General Purpose NPN Silicon Transistor P b Lead(Pb)-Free COLLECTOR 3 Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO 1 2 SC-89 SOT-523F Value 40 60 6.0 200 Unit Vdc Vdc Vdc m Adc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1) TA=25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Device Marking MMBT3904T=MA Symbol PD RθJA PD RθJA TJ Tstg Max 200 1.6 600 300 2.4 400 -55 to +150 -55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C °C Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Off Characteristics Collector-Emitter Breakdown Voltage(3) (IC=1.0m A ,IB=0) Collector-Base Breakdown Voltage (IC=10 µA , IE=0) Emitter-Base...