PZT2222A - NPN Silicon Planar Epitaxial Transistor

WEITRON

Datasheet Details

Part number	PZT2222A
Manufacturer	WEITRON
File Size	98.23 KB
Description	NPN Silicon Planar Epitaxial Transistor
Datasheet	PZT2222A Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
PZT2222A	NPN switching transistor	NXP
PZT2222A	NPN General Purpose Amplifier	Fairchild Semiconductor
PZT2222A	SMD General Purpose Transistor	TAITRON
PZT2222A	NPN GENERAL PURPOSE AMPLIFIER	UTC
PZT2222A	Suface Mount Si-Epitaxial Planar Switching Transistors	Diotec

Other Datasheets by WEITRON

Part Number	Description
PZT2907A	PNP Silicon Planar Epitaxial Transistor
PZTA14	Darlington NPN Silicon Planar Epitaxial Transistor
PZTA42	NPN Silicon Planar Epitaxial Transistor
PZTA92	High-Voltage PNP Transistor
PZTA94	High-Voltage PNP Transistor Surface Mount

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

PZT2222A NPN Silicon Planar Epitaxial Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25 C) BASE 1 COLLECTOR 2, 4 3 EM ITTER SOT-223 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR 1 2 3 4 Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC(DC) PD Tj Tstg Value 40 75 6.0 600 1.5 150 -65 to +150 Unit Vdc Vdc Vdc Adc W C C Device Marking PZT2222A=GT2222A ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0) Collector-Base Breakdown Voltage (IC=10 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 10 µAdc, IC=0) Base-Emitter Cutoff Current (VCE= 60 Vdc, VBE=-3.