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RoHS MMBD4148/BAS16TW
MMBD4148TW /BAS16TW SWITCHING DIODE
FEATURES
DPower dissipation TPD: 200 mW (Tamb=25℃)
.,LCollector current IO: 150 mA Collector-base voltage
OVR: 75 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
64
NICMAKING: KA2
OA R1
3
CTELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
EParameter LReverse breakdown voltage EReverse voltage leakage current JForward voltage ETotal capacitance WReveres recovery time
Symbol V(BR) R
IR
VF CT trr
Test conditions
IR= 100µA
VR=75V VR=20V IF=1mA IF=10mA IF=50mA IF=150mA VR=0V, f=1MHz
IF=IR=10mA Irr=0.1×IR, RL=100Ω
MIN MAX
75
1 0.025 0.715 0.855
1 1.25
2
4
UNIT V
µA
V
pF
nS
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.
BAS16TW Datasheet