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BAW56W - DIODE

Datasheet Summary

Features

  • TPower dissipation . ,LPD: 200 mW (Tamb=25℃) Collector current IO: 150 mA OCollector-base voltage VR: 75 V COperating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. 30¡ À0. 03 SOT-323 1. 25¡ À0. 05 2. 30¡ À0. 05 Unit: mm 0. 30 2. 00¡ À0. 05 1. 01 REF ONICMarking: KJC.

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Datasheet Details

Part number BAW56W
Manufacturer WEJ
File Size 120.71 KB
Description DIODE
Datasheet download datasheet BAW56W Datasheet
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    RoHS BAW56W SOT-323 Plastic-Encapsulate DIODE BAW56W SWITCHING DIODE DFEATURES TPower dissipation .,LPD: 200 mW (Tamb=25℃) Collector current IO: 150 mA OCollector-base voltage VR: 75 V COperating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. 30¡ À0. 03 SOT-323 1. 25¡ À0. 05 2. 30¡ À0. 05 Unit: mm 0. 30 2. 00¡ À0. 05 1. 01 REF ONICMarking: KJC TRELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) CParameter EReverse breakdown voltage LReverse voltage leakage current EForward voltage JDiode capacitance WEReveres recovery time Symbol V(BR) R IR VF CD trr Test conditions IR= 100µA VR=75V IF=1mA IF=10mA IF=50mA IF=150mA VR=0V, f=1MHz IF=IR=10mA Irr=0.1×IR MIN MAX 75 2.5 715 855 1000 1250 2 4 UNIT V µA mV pF nS WEJ ELECTRONIC CO. Http:// www.wej.
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