WFP650 Datasheet | WINSEMI SEMICONDUCTOR

Features - - - - - - 28A, 200v, RDS(on)=0.085Ω @VGS=10V Low gate charge (typical 95 n C) Low crss (typical 75 p F) Fast switching 100% avalanche tested Improved dv/dt capability General Description These N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary , planar,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching Performance , and with stand high energy pulse in the avalanche and mutation mode.These devices are well suited for high efficiency switching DC/DC converters, Switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ,TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous(TC=25℃) -Continuous(TC=100℃) Drain Current -Pulsed Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation(TC=25℃) -Derate above25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds (Note 2) (Note 1) (Note 1) (Note 3) (Note 1) Value 200 28 17.7 112 ±30 600 28 15.6 5.5 156 1.25 -55~150 300 Units V A A A V m J A m J V/ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance,Junction-to-Case Thermal Resistance,Case-to-Sink Thermal Resistance,Junction-Ambient Min - Value Typ - Max 0.8 62.5 Units ℃/W ℃/W ℃/W Rev.A Jul.2010 Copyright@Win Semi Semiconductor Co., Ltd., All right reserved. .Data Sheet.in Electrical Characteristics TC=25℃ Characteristics Drain-source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current ,Forward Gate-Body Leakage Current ,Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse...