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WFP650 - Silicon N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary , planar,DMOS technology.

Key Features

  • 28A, 200v, RDS(on)=0.085Ω @VGS=10V Low gate charge (typical 95 nC) Low crss (typical 75 pF) Fast switching 100% avalanche tested Improved dv/dt capability General.

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Datasheet Details

Part number WFP650
Manufacturer WINSEMI SEMICONDUCTOR
File Size 653.70 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFP650 Datasheet

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www.DataSheet.in WFP650 Silicon N-Channel MOSFET Features � � � � � � 28A, 200v, RDS(on)=0.085Ω @VGS=10V Low gate charge (typical 95 nC) Low crss (typical 75 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description These N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary , planar,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching Performance , and with stand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switching DC/DC converters, Switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.