Datasheet Details
| Part number | WFP650 |
|---|---|
| Manufacturer | WINSEMI SEMICONDUCTOR |
| File Size | 653.70 KB |
| Description | Silicon N-Channel MOSFET |
| Datasheet | WFP650_WINSEMISEMICONDUCTOR.pdf |
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Overview: .DataSheet.in WFP650 Silicon N-Channel MOSFET.
| Part number | WFP650 |
|---|---|
| Manufacturer | WINSEMI SEMICONDUCTOR |
| File Size | 653.70 KB |
| Description | Silicon N-Channel MOSFET |
| Datasheet | WFP650_WINSEMISEMICONDUCTOR.pdf |
|
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These N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary , planar,DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching Performance , and with stand high energy pulse in the avalanche and mutation mode.These devices are well suited for high efficiency switching DC/DC converters, Switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ,TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous(TC=25℃) -Continuous(TC=100℃) Drain Current -Pulsed Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation(TC=25℃) -Derate above25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds (Note 2) (Note 1) (Note 1) (Note 3) (Note 1) Value 200 28 17.7 112 ±30 600 28 15.6 5.5 156 1.25 -55~150 300 Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance,Junction-to-Case Thermal Resistance,Case-to-Sink Thermal Resistance,Junction-Ambient Min - Value Typ 0.5 - Max 0.8 62.5 Units ℃/W ℃/W ℃/W Rev.A Jul.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
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