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NXPSC08650D - Silicon Carbide Diode

General Description

Silicon Carbide Schottky diode designed for high frequency switched mode power supplies in a TO252 (DPAK) plastic package.

2.

Key Features

  • Highly stable switching performance.
  • High forward surge capability IFSM.
  • Extremely fast reverse recovery time.
  • Superior in efficiency to Silicon Diode alternatives.
  • Reduced losses in associated MOSFET.
  • Reduced EMI.
  • Reduced cooling requirements.
  • RoHS compliant 3.

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Datasheet Details

Part number NXPSC08650D
Manufacturer WeEn
File Size 276.55 KB
Description Silicon Carbide Diode
Datasheet download datasheet NXPSC08650D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NXPSC08650D Silicon Carbide Diode 4 January 2017 Product data sheet 1. General description Silicon Carbide Schottky diode designed for high frequency switched mode power supplies in a TO252 (DPAK) plastic package. 2. Features and benefits • Highly stable switching performance • High forward surge capability IFSM • Extremely fast reverse recovery time • Superior in efficiency to Silicon Diode alternatives • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant 3. Applications • Power factor correction • Telecom/Server SMPS • UPS • PV inverter • PC Silverbox • LED/OLED TV • Motor Drives 4. Quick reference data Table 1.