WG30N65HJ1 Description
WG30N65HJ1 uses advanced Fine Trench Field-stop technology IGBT in TO3PF package to provide extremely low Vce(sat), and excellent switching performance. This device offers Best-in-Class efficiency in hard switching and resonant topology.
WG30N65HJ1 Key Features
- Maximum junction temperature 175 °C
- Positive Temperature efficient for easy paralleling
- High switching speed
- EMI Improved Design