WG30N65HJ1 - IGBT

Description

WG30N65HJ1 uses advanced Fine Trench Field-stop technology IGBT in TO3PF package to provide extremely low Vce(sat), and excellent switching performance.

This device offers Best-in-Class efficiency in hard switching and resonant topology.

Features

Maximum junction temperature 175 °C.
Positive Temperature efficient for easy paralleling.
High switching speed.
EMI Improved Design 3.

WeEn

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Datasheet Details

Part number	WG30N65HJ1
Manufacturer	WeEn
File Size	654.29 KB
Description	IGBT
Datasheet	WG30N65HJ1 Datasheet
Additional preview pages of the WG30N65HJ1 datasheet.

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Full PDF Text Transcription

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WG30N65HJ1 IGBT Rev.01 - 04 March 2024 Product data sheet 1. General description WG30N65HJ1 uses advanced Fine Trench Field-stop technology IGBT in TO3PF package to provide extremely low Vce(sat), and excellent switching performance. This device offers Best-in-Class efficiency in hard switching and resonant topology. RoHS halogen-Free 2. Features and benefits • Maximum junction temperature 175 °C • Positive Temperature efficient for easy paralleling • High switching speed • EMI Improved Design 3. Applications • PFC • Solar converters • UPS • Welding Converters • Mid to high range switching frequency converters 4. Quick reference data Table 1.

Published: Mar 7, 2025 |