WMSC004H12B2S
WMSC004H12B2S is N-Channel Silicon Carbide MOSFET manufactured by WeEn.
description
We En PACK-B2 module with We En 1200V Gen2 Si C MOSFET and Solder pin type. Integrated with NTC temperature sensor. h Ro HS alogen-Free
2. Features and benefits
- Half bridge topology
- Solder pin configuration
- Low RDSon-Tj coefficient
- Low Switching Losses
- Low Qg and Crss
- Mimimized circuit impedance
- Improved chip synchronization performance
3. Applications
- Power inverters
- AC-DC converters
- DC-DC converters
- Active power factor correctors
- Motor drivers
4. Quick reference data
Table 1. Quick reference data Symbol Parameter
Absolute maximum rating
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Symbol Parameter
Static characteristics
RDS(on) drain-source on-state resistance
Dynamic characteristics
Conditions
Tj = 25 °C VGS = 18 V; Th = 25 °C Th = 25 °C
Conditions VGS = 15 V; ID = 250 A; Tj = 25 °C
Notes
Values
1200 227 272 -40 to 150 Notes Min Typ Max
- 4.0
- QG(tot) total gate charge
QGD gate-drain charge
Source-drain diode
ID = 250 A; VDS = 800 V; VGS = 0 V/18 V; Tj = 25 °C
- 945
-...
