WMSC006H12B2P
WMSC006H12B2P is N-Channel Silicon Carbide MOSFET manufactured by WeEn.
description
We En PACK-B2 module with We En 1200V Gen2 Si C MOSFET and Pressfit type. Integrated with NTC temperature sensor. h Ro HS alogen-Free
2. Features and benefits
- Half bridge topology
- Press-fit pin configuration
- Low RDSon-Tj coefficient
- Low Switching Losses
- Low Qg and Crss
- Mimimized circuit impedance
- Improved chip synchronization performance
3. Applications
- Power inverters
- AC-DC converters
- DC-DC converters
- Active power factor correctors
- Motor drivers
4. Quick reference data
Table 1. Quick reference data Symbol Parameter
Conditions
Notes
Values
Absolute maximum rating
VDS drain-source voltage
Tj = 25 °C
ID drain current
VGS = 15 V; Th = 25 °C
Ptot total power dissipation Th = 25 °C
Tj junction temperature
-40 to 150
Symbol Parameter
Static characteristics
RDS(on) drain-source on-state resistance
Dynamic characteristics
Conditions VGS = 15 V; ID = 200 A; Tj = 25 °C
Notes Min Typ Max
- 6.0
- QG(tot) total gate...
